| PART |
Description |
Maker |
| KDR720S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR367 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR368E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| MPE-29G |
90V0A,Schottky Barrier Diodes(90V0A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE
Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| 5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| B5A60VIC B5A60 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR331V |
SCHOTTKY BARRIER TYPE DIODE
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| CDBURT0230R-HF CDBUR0230R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
| CDBQR0140R-HF12 CDBQR0140R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.1A
SMD Schottky Barrier Diode
|
Comchip Technology
|
